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| CHONGQING PINGYANG ELECTRONICS CO.,LTD. KBU6005/RS601/KBU6A THRU KBU610/RS607/KBU6M SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE50-1000V CURRENT6.0A FEATURES *Low leakage *Low forward voltage *Surge overload ratings-250 Amperes *Molded structure KBU .935(23.7) .895(22.7) .700(17.8) .600(16.8) .300 (7.5) .780(19.8) .740(18.8) - AC + .052(1.3) DIA. .048(1.2) TYP. 1.00 (25.4) MIN. MECHANICAL DATA *Case: Molded plastic *Epoxy: UL 94V-0 rate flame retardant *Lead: MIL-STD- 202E, Method 208 guaranteed *Polarity: Symbols molded or marked on body *Mounting position: Any *Weight: 8.0 grams .140 (5.3) .220(5.6) SPACING .180(4.6) .280(7.0) .268(6.8) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. KBU6005KBU601 KBU602 KBU604 KBU606 KBU608 KBU610 Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Output Current at TC=75C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Forward Voltage Drop per element at 3.0A DC Maximum DC Reverse Current @ TA=25C at Rated DC Blocking Voltage @ TA=100C per element I2t Rating for Fusing (t<8.3ms) Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Notes: SYMBOL RS601 KBU6A VRRM 50 VRMS 35 VDC 50 Io IFSM VF IR It CJ RJA 2 RS602 RS603 RS604 RS605 RS606 RS607 units V V V A A V A A Sec pF C/W 2 KBU6B KBU6D KBU6G 100 200 400 70 140 280 100 200 400 6.0 200 1.0 10 500 127 186 10 KBU6J KBU6K KBU6M 600 800 1000 420 560 700 600 800 1000 1.Measured at 1MHz and applied reverse voltage of 4.0 volts 2.Thermal Resistance from Junction to Ambientwith units mounted on 0.47x0.47"(12x12mm) copper pads PDF "pdfFactory Pro" www.fineprint.cn |
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